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參數(shù)資料
| 型號： | APT50GT120LR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 196K |
| 代理商： | APT50GT120LR |
Symbol
Parameter
Ratings
Unit
V
CES
Collector-Emitter Voltage
1200
Volts
V
GE
Gate-Emitter Voltage
±30
I
C1
Continuous Collector Current @ T
C = 25°C
94
Amps
I
C2
Continuous Collector Current @ T
C = 100°C
50
I
CM
Pulsed Collector Current 1
150
SSOA
Switching Safe Operating Area @ T
J = 150°C
150A @ 1200V
P
D
Total Power Dissipation
625
Watts
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
300
Maximum Ratings
All Ratings: T
C = 25°C unless otherwise specied.
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
V
(BR)CES
Collector-Emitter Breakdown Voltage (V
GE = 0V, IC = 3mA)
1200
-
Volts
V
GE(TH)
Gate Threshold Voltage (V
CE = VGE, IC = 2mA, Tj = 25°C)
4.5
5.5
6.5
V
CE(ON)
Collector Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 25°C)
2.7
3.2
3.7
Collector Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 125°C)
-
4.0
-
I
CES
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
-
200
μA
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
-
2.0
mA
I
GES
Gate-Emitter Leakage Current (V
GE = ±20V)
-
300
nA
Static Electrical Characteristics
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
.
Microsemi Website - http://www.microsemi.com
052-6270
Rev
D
9-2008
APT50GT120B2R(G)
APT50GT120LR(G)
1200V, 50A, VCE(ON) = 3.2V Typical
Thunderbolt IGBT
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-
ness and ultrafast switching speed.
Features
Low Forward Voltage Drop
Low Tail Current
RoHS Compliant
RBSOA and SCSOA Rated
High Frequency Switching to 50KHz
Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GT120LRDQ2G | 功能描述:IGBT 1200V 106A 694W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GT120LRG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT60BR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
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