- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36713 > APT44GA60SD30C (MICROSEMI POWER PRODUCTS GROUP) 78 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APT44GA60SD30C |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, D3PAK-3 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 221K |
| 代理商： | APT44GA60SD30C |
052-6308
Rev
A
1-
2010
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT44GA60B_SD30C
T
J
= 125°C
V
R
= 400V
15A
30A
60A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
200
180
160
140
120
100
80
60
40
20
0
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175°C
0
25
50
75
100
125
150
25
50
75
100
125
150
175
1
10
100 200
60
50
40
30
20
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
180
160
140
120
100
80
60
40
20
0
C
J
,JUNCTION
CAP
A
CIT
ANCE
K
f
,D
YNAMIC
P
ARAMETERS
(pF)
(Nor
maliz
ed
to
1000A/
s)
I F(A
V)
(A)
T
J
, JUNCTION TEMPERATURE (°C)
Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
Figure 7. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
100
80
60
40
20
0
1200
1000
800
600
400
200
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
-di
F
/dt, CURRENT RATE OF CHANGE(A/s)
Figure 2. Forward Current vs. Forward Voltage
Figure 3. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 5. Reverse Recovery Current vs. Current Rate of Change
0
0.5
1.0
1.5
2.0
2.5
3.0
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
Q
rr
,REVERSE
RECO
VER
Y
CHARGE
I F
,FOR
W
ARD
CURRENT
(nC)
(A)
I
RRM
,REVERSE
RECO
VER
Y
CURRENT
t rr
,REVERSE
RECO
VER
Y
TIME
(A)
(ns)
T
J
= 175°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 125°C
V
R
= 400V
60A
30A
15A
T
J
= 125°C
V
R
= 400V
60A
15A
30A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT44GA60BD30C | 78 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT4540BN-BUTT | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4540BN-GULLWING | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-GULLWING | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-BUTT | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT45-101DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP |
| APT4510DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | CHIP |
| APT4510FN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | F-PACK SIP |
| APT4511AFN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 450V V(BR)DSS | 49A I(D) |
| APT4511DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | CHIP |
發(fā)布緊急采購，3分鐘左右您將得到回復。