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參數(shù)資料
| 型號(hào)： | APT44GA60SD30C |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, D3PAK-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 221K |
| 代理商： | APT44GA60SD30C |
052-6308
Rev
A
1
-
2010
Typical Performance Curves
APT44GA60B_SD30C
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
10-5
10-4
10-3
10-2
0.1
1
10
100
1000
10000
0
100
200
300
400
500
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC +TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C,
CAP
ACIT
ANCE
(pF)
0.1
1
10
100
1000
1
10
100
800
V
CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
I C
,COLLECT
OR
CURRENT
(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT44GA60BD30C | 78 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT4540BN-BUTT | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4540BN-GULLWING | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-GULLWING | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-BUTT | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
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