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參數(shù)資料
| 型號(hào)： | APT44GA60BD30C |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大小： | 221K |
| 代理商： | APT44GA60BD30C |
052-6308
Rev
A
1
-
2010
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Symbol
Characteristic / Test Conditions
APT44GA60B_SD30C
Unit
I
F(AV)
Maximum Average Forward Current (T
C = 117°C, Duty Cycle = 0.5)
30
Amps
I
F(RMS)
RMS Forward Current (Square wave, 50% duty)
51
I
FSM
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3 ms)
320
Symbol
Characteristic / Test Conditions
Min
Type
Max
Unit
V
F
Forward Voltage
I
F = 30A
2.0
Volts
I
F = 60A
2.4
I
F = 30A, TJ = 125°C
1.7
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
t
rr
Reverse Recovery Time
I
F = 1A,
di
F/dt = -100A/s,
V
R = 30V, TJ = 25°C
-
23
-
ns
t
rr
Reverse Recovery Time
I
F
= 30A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 25°C
-
30
-
Q
rr
Reverse Recovery Charge
-
55
-
nC
I
RRM
Maximum Reverse Recovery Current
-
3
-
Amps
t
rr
Reverse Recovery Time
I
F
= 30A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 125°C
-
175
-ns
Q
rr
Reverse Recovery Charge
-
485
-
nC
I
RRM
Maximum Reverse Recovery Current
-
6
-
Amps
t
rr
Reverse Recovery Time
I
F
= 30A, di
F
/dt = -1000A/s
V
R
= 400V, T
C
= 125°C
-
75
-
ns
Q
rr
Reverse Recovery Charge
-
855
-nC
I
RRM
Maximum Reverse Recovery Current
-
22
-
Amps
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
D = 0.9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT4540BN-BUTT | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4540BN-GULLWING | 16 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-GULLWING | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BN-BUTT | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4550BN-BUTT | 14 A, 450 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT44GA60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT44GA60SD30 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT45-101DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP |
| APT4510DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | CHIP |
| APT4510FN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | F-PACK SIP |
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