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參數(shù)資料
| 型號(hào)： | APT44GA60BD30C |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | APT44GA60BD30C |
052-6308
Rev
A
1-
2010
Thermal and Mechanical Characteristics
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT44GA60B_SD30C
Symbol
Characteristic
Min
Typ
Max
Unit
R
θJC
Junction to Case Thermal Resistance (IGBT)
-
.37
°C/W
R
θJC
Junction to Case Thermal Resistance (Diode)
0.8
W
T
Package Weight
-
5.9
-
g
Torque
Mounting Torque (TO-247 Package), 4-40 or M3 screw
10
inlbf
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
C
ies
Input Capacitance
Capacitance
V
GE = 0V, VCE = 25V
f = 1MHz
3404
pF
C
oes
Output Capacitance
358
C
res
Reverse Transfer Capacitance
43
Q
g
Total Gate Charge 3
Gate Charge
V
GE = 15V
V
CE= 300V
I
C = 26A
128
nC
Q
ge
Gate-Emitter Charge
22
Q
gc
Gate- Collector Charge
44
SSOA
Switching Safe Operating Area
T
J = 150°C, RG = 10Ω
4
, V
GE = 15V,
L= 100uH, V
CE = 600V
130
A
t
d(on)
Turn-On Delay Time
Inductive Switching (25°C)
V
CC = 400V
V
GE = 15V
I
C = 26A
R
G = 4.7Ω
4
T
J = +25°C
16
ns
t
r
Current Rise Time
14
t
d(off)
Turn-Off Delay Time
102
t
f
Current Fall Time
100
E
on2
Turn-On Switching Energy
409
μJ
E
off
Turn-Off Switching Energy 6
450
t
d(on)
Turn-On Delay Time
Inductive Switching (125°C)
V
CC = 400V
V
GE = 15V
I
C = 26A
R
G = 4.7Ω
4
T
J = +125°C
14
ns
t
r
Current Rise Time
15
t
d(off)
Turn-Off Delay Time
142
t
f
Current Fall Time
150
E
on2
Turn-On Switching Energy
621
μJ
E
off
Turn-Off Switching Energy 6
692
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E
on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT44GA60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT44GA60SD30 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT45-101DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP |
| APT4510DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | CHIP |
| APT4510FN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | F-PACK SIP |
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