參數(shù)資料
型號(hào): APT40N60B2CF
元件分類(lèi): JFETs
英文描述: 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: T-MAX, 3 PIN
文件頁(yè)數(shù): 5/5頁(yè)
文件大?。?/td> 191K
代理商: APT40N60B2CF
050-7236
Rev
A
5-2005
Typical Performance Curves
APT40N60B2CF(G)_LCF(G)
Scope pics are placed with the place command
and then scaled to 50%
T-MAXTM (B2) Package Outline (B2CF)
TO-264 (L) Package Outline (LCF)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 19, Turn-off Switching Waveforms and Denitions
Figure 18, Turn-on Switching Waveforms and Denitions
Drain Current
Drain Voltage
Gate Voltage
T
J125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
APT30DQ60
ID
VDS
D.U.T.
VDD
G
Figure 20, Inductive Switching Test Circuit
T
J125°C
10%
0
t
d(off)
t
f
Switching Energy
90%
Drain Voltage
Gate Voltage
Drain Current
e1 SAC: Tin, Silver, Copper
Switching Energy
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
D
ra
in
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
ra
in
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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