參數(shù)資料
型號(hào): APT40N60B2CF
元件分類: JFETs
英文描述: 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: T-MAX, 3 PIN
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 191K
代理商: APT40N60B2CF
050-7236
Rev
A
5-2005
Typical Performance Curves
APT40N60B2CF(G)_LCF(G)
Scope pics are placed with the place command
and then scaled to 50%
Scope pics are placed with the place command
and then scaled to 50%
7V
5.5V
6V
6.5V
V
GS = 15 &10 V
8V
100
90
80
70
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS> ID(ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, RDS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
20
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
-50
0
50
100
150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
7.5V
T
J = -55°C
T
J = +25°C
T
J = +125°C
NORMALIZED TO
V
GS = 10V @ 20A
V
GS=10V
V
GS=20V
0.0136
0.0289
0.0988
0.00308F
0.00145F
0.00948F
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
0.158
0.231F
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
0
3.0
2.5
2.0
1.5
1.0
0.5
0
ID = 20A
VGS = 10V
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