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參數(shù)資料
| 型號： | APT40M82WVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 60K |
| 代理商： | APT40M82WVR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
1
5
10
50
100
400
.01
.1
1
10
50
0
100
200
300
400
500
600
0
0.4
0.8
1.2
1.6
2.0
APT40M82WVR
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
0
OPERATION HERE
LIMITED BY R
DS
(ON)
TJ =+150
°
C
TJ =+25
°
C
Crss
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
Coss
Ciss
30,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
VDS=200V
VDS=80V
VDS=320V
I
D
= I
D
[Cont.]
10
μ
S
1mS
10mS
100mS
DC
100
μ
S
TO-267 Package Outline
5.00 (.197) BSC
1.80 (.071)
1.25 (.049)
20.45 (.805)
20.20 (.795)
4.19 (.165)
3.95 (.156)
Drain
Source
Gate
1.65 (.065)
1.40 (.055)
Dia. Typ.
3 Leads
20.32 (.800)
20.07 (.790)
19.05 (.750)
12.70 (.500)
24.15 (.951)
23.60 (.929)
10.23 (.403)
10.10 (.398)
Dimensions in Millimeters and (Inches)
4.20 (.165) BSC
7.40 (.291)
6.60 (.260)
16.90 (.665)
16.40 (.646)
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參數(shù)描述 |
|---|---|
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