參數(shù)資料
型號: APT40M82WVR
廠商: Advanced Power Technology Ltd.
英文描述: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述: 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。
文件頁數(shù): 2/4頁
文件大?。?/td> 60K
代理商: APT40M82WVR
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°
C
R
G
= 0.6
MIN
TYP
MAX
7410
1140
450
330
40
127
16
16
54
5
8890
1600
675
495
60
190
32
32
80
10
UNIT
pF
nC
ns
APT40M82WVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
μ
s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
μ
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μ
C
MIN
TYP
MAX
44
176
1.3
540
11.8
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25
°
C, L = 2.58mH, R
G
=
25
, Peak I
L
= 44A
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.28
40
UNIT
°
C/W
Characteristic
Junction to Case
Junction to Ambient
Z
θ
J
,
°
C
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
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