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參數(shù)資料
| 型號： | APT40GT60BR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 188K |
| 代理商： | APT40GT60BR |
Typical Performance Curves
APT40GT60BR
052-6222
Rev
C
1
1-
2008
0
10
20
30
40
50
60
70
80
25
35
45
55
65
75
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
10-5
10-4
10-3
10-2
10
1.0
-1
100
1000
10,000
100,000
0
10
20
30
40
50
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F
MAX
,OPERA
TING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 400V
R
G = 1.0Ω
0.5
0.1
0.05
F
max
= min (f
max, f max2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - P cond
E
on2 + E off
f
max2 =
P
diss =
T
J - T C
R θJC
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
75°C
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C,
CAP
ACIT
ANCE
(pF)
0
25
50
75
100
125
150
175
200
0
100
200
300 400
500
600 700
V
CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
I C
,COLLECT
OR
CURRENT
(A)
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
.07172
.1434
.1451
.00157
.0040
0.1270
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