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參數(shù)資料
| 型號： | APT40GT60BR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | APT40GT60BR |
052-6222
RevA
11-2001
APT40GT60BR
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.5VCES
IC = IC2
RG = 10
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
2190
2520
220
320
130
220
200
300
12
20
86
130
13
30
53
110
205
310
250
500
20
40
43
90
295
440
58
120
.85
2
1.5
3
2.3
5
20
40
46
90
265
400
53
110
1.75
4
UNIT
pF
nC
ns
mJ
ns
mJ
S
UNIT
°C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.36
40
0.22
6.1
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
Symbol
RΘJC
RΘJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C = IC2, RGE = 25
, L = 50H, T
j = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
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相關(guān)代理商/技術(shù)參數(shù) |
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| APT40GT60BRG | 功能描述:IGBT 600V 80A 345W TO247 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT40M35JVFR | 功能描述:MOSFET N-CH 400V 93A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT40M35JVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M35PVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M42BFN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 400V V(BR)DSS | 95A I(D) |
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