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參數(shù)資料
| 型號(hào)： | APT40GT60BR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 81K |
| 代理商： | APT40GT60BR |
052-6222
RevA
11-2001
APT40GT60BR
TO-247
G
C
E
G
C
E
APT40GT60BR
600V
80A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Thunderbolt IGBT
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
MIN
TYP
MAX
600
-15
34
5
1.6
2.15
2.5
2.8
80
2000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 100mA)
Gate Threshold Voltage
(VCE = VGE, IC = 500A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
RBVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VCGR
VEC
VGE
I C1
I C2
I CM
I LM
EAS
PD
TJ,TSTG
TL
APT40GT60BR
600
15
±20
80
40
160
80
40
345
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1
@ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11 TC = 125°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
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| APT40GT60BRG | 功能描述:IGBT 600V 80A 345W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT40M35JVFR | 功能描述:MOSFET N-CH 400V 93A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT40M35JVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M35PVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M42BFN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 400V V(BR)DSS | 95A I(D) |
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