- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36713 > APT40GP90JDF2 68 A, 900 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APT40GP90JDF2 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 68 A, 900 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 211K |
| 代理商： | APT40GP90JDF2 |
APT40GP90JDF2
050-7482
Rev
B
8-2004
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 450V
IC = 40A
TJ = 150°C, RG = 5, VGE =
15V, L = 100H,VCE = 900V
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 40A
RG = 5
TJ = +25°C
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 40A
RG = 5
TJ = +125°C
MIN
TYP
MAX
3300
325
35
7.5
145
22
55
160
16
27
75
60
TBD
1415
825
16
27
110
105
TBD
2370
1505
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
°C/W
gm
MIN
TYP
MAX
.44
1.1
21.9
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RΘJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT40GT60BR | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT40GT60BR | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT40M35JVR | 93 A, 400 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40M42JN | 86 A, 400 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40M70B2VFR | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT40GP90JDQ2 | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 900V 64A 4-Pin SOT-227 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi 功能描述:Microsemi APT40GP90JDQ2 IGBTs 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR 制造商:Microsemi 功能描述:Trans IGBT Chip N-CH 900V 64A 4-Pin SOT-227 |
| APT40GR120B | 功能描述:IGBT 1200V 88A 500W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT40GR120B2D30 | 功能描述:IGBT 1200V 88A 500W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT40GR120B2SCD10 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 88A 500W TO247 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE POWER TRANSISTORS/MODULES |
| APT40GR120S | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 88A 500W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。