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參數(shù)資料
| 型號(hào)： | APT33GF120LRD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 52 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | APT33GF120LRD |
APT33GF120B2RD/LRD
052-6254
Rev
C
3-2003
Z
Θ
JC
,THERMAL
IMPEDANCE
t rr
,REVERSE
RECOVERY
TIME
I RRM
,REVERSE
RECOVERY
CURRENT
I F
,FORWARD
CURRENT
(°C/W)
(nano-SECONDS)
(AMPERES)
t fr
,FORWARD
RECOVERY
TIME
K
f,
DYNAMIC
PARAMETERS
Q
rr
,REVERSE
RECOVERY
CHARGE
(nano-SECONDS)
(NORMALIZED)
(nano-COULOMBS)
V
fr
,FORWARD
RECOVERY
VOLTAGE
(VOLTS)
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTE:
DM
JC
C
J=+
DUTY FACTOR D = t12
/
PEAK T
P
x Z
T
P
DM
t
2
t
t1
0
1
2
3
4
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
100
80
60
40
20
0
50
40
30
20
10
0
250
200
150
100
50
0
1.0
0.5
0.1
0.05
0.01
0.005
0.001
TJ = 100°C
VR = 650V
2400
2000
1600
1200
800
400
0
2.0
1.6
1.2
0.8
0.4
0.0
2000
1600
1200
800
400
0
100
80
60
40
20
0
TJ = 100°C
VR = 650V
TJ = 100°C
VR = 650V
TJ = 100°C
VR = 650V
IF =30A
trr
IRRM
Qrr
TJ = -55°C
TJ = 100°C
TJ = 150°C
15A
30A
60A
15A
30A
60A
30A
15A
Vfr
tfr
TJ = 25°C
trr
Qrr
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
diF /dt, CURRENT SLEW RATE (AMPERES/SEC)
Figure 19, Forward Voltage Drop vs Forward Current
Figure 20, Reverse Recovery Charge vs Current Slew Rate
diF /dt,CURRENTSLEWRATE(AMPERES/SEC)
TJ,JUNCTIONTEMPERATURE(°C)
Figure 21, Reverse Recovery Current vs Current Slew Rate
Figure 22, Dynamic Parameters vs Junction Temperature
diF /dt,CURRENTSLEWRATE(AMPERES/SEC)
Figure 23, Reverse Recovery Time vs Current Slew Rate
Figure 24, Forward Recovery Voltage/Time vs Current Slew Rate
VR, REVERSE VOLTAGE (VOLTS)
Figure 25, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT33GF120LRDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT33GF120LRDQ2G | 功能描述:IGBT 1200V 64A 357W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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| APT33N90JCCU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT33N90JCU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227 |
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