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參數(shù)資料
| 型號： | APT33GF120LRD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 52 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 113K |
| 代理商： | APT33GF120LRD |
APT33GF120B2RD/LRD
052-6254
Rev
C
3-2003
C,
CAPACITANCE
(pF)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(VOLTS)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
TC =+25°C
TJ =+150°C
SINGLE PULSE
250Sec. Pulse Test
VGE = 15V
IC = IC2
TJ = +25°C
f = 1MHz
8V
Cies
Cres
10V
9V
7V
Coes
VGE=17, 15 & 13V
TC=-55°C
TC=+150°C
OPERATION
LIMITED
BY
VCE (SAT)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
Figure 2, Typical Output Characteristics (TJ = 150°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V
Figure 4, Maximum Forward Safe Operating Area
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
VCE=240V
60
40
20
0
80
60
40
20
0
3,000
1,000
100
10
TC=+25°C
100S
1mS
10mS
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.05
D=0.5
0.2
0.01
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.1
0.02
0.5
0.1
0.05
0.01
0.005
0.001
0
4
8
12
16
20
0
4
8
12
16
20
0
2
4
6
8
1
10
100
1200
.01
0.1
1.0
10
50
0
50
100
150
200
250
10-5
10-4
10-3
10-2
10-1
1.0
10
60
40
20
0
100
10
1
20
16
12
8
4
0
VCE=960V
VCE=600V
11V
12V
8V
10V
9V
7V
VGE=17, 15 & 13V
11V
12V
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| APT33GF120LRDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT33GF120LRDQ2G | 功能描述:IGBT 1200V 64A 357W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT33N90JCCU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT33N90JCCU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT33N90JCU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227 |
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