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參數(shù)資料
| 型號： | APT33GF120BR |
| 英文描述： | Volts:1200V VF/Vce(ON):3.2V ID(cont):33Amps|Fast IGBT Family |
| 中文描述： | 電壓：1200伏室顫/的Vce（on）：3.2V的身份證（續(xù)）：三十三安培|快速IGBT系列 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 78K |
| 代理商： | APT33GF120BR |
0
MAXIMUM RATINGS (IGBT)
All Ratings: T
C
= 25°C unless otherwise specified.
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
Low Tail Current
RBSOA and SCSOA Rated
High Freq. Switching to 20KHz
Ultra Low Leakage Current
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.3
3.2
3.9
0.5
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700μA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT33GF120BR
1200
1200
±20
52
33
104
66
65
297
-55 to 150
300
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 57 9215 15
FAX: (33)556479761
APT33GF120BR
1200V
52A
TO-247
GCE
G
C
E
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Gate Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 105°C
Pulsed Collector Current
1
@ T
C
= 25°C
RBSOA Clamped Inductive Load Current @ R
G
= 11
T
C
= 125 °C
Single Pule Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
m
J
Watts
°C
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT33GF120BRG | 功能描述:IGBT 1200V 52A 297W TO247 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT33GF120HR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs |
| APT33GF120LRD | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 1.2KV 52A 3-Pin(3+Tab) TO-264 |
| APT33GF120LRDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT33GF120LRDQ2G | 功能描述:IGBT 1200V 64A 357W TO264 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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