參數(shù)資料
型號: APT33GF120B2RD
廠商: Advanced Power Technology Ltd.
英文描述: The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
中文描述: ⑩的快速IGBT是一種高壓IGBT的新一代。
文件頁數(shù): 6/8頁
文件大小: 141K
代理商: APT33GF120B2RD
PRELMNARY
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 85
°
C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
°
C, 8.3ms)
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 30A
Maximum Forward Voltage
I
F
= 60A
I
F
= 30A, T
J
= 150
°
C
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
Amps
UNIT
Volts
MIN
TYP
MAX
2.5
2.0
2.0
APT33GF120B2RD/LRD
1200
30
70
210
MAXIMUM RATINGS (FRED)
All Ratings: T
C
= 25
°
C unless otherwise specified.
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
0
MIN
TYP
MAX
70
85
70
160
255
255
7
12
12
20
660
1640
15
20
245
160
UNIT
ns
Amps
nC
Volts
A/
μ
s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt
= -15A/
μ
s, V
R
= 30V,
T
J
= 25
°
C
Reverse Recovery Time
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
I
F
= 30A, di
F
/dt
= -240A/
μ
s, V
R
= 650V
Forward Recovery Time
I
F
= 30A, di
F
/dt
= 240A/
μ
s, V
R
= 650V
Reverse Recovery Current
I
F
= 30A, di
F
/dt
= -240A/
μ
s, V
R
= 650V
Recovery Charge
I
F
= 30A, di
F
/dt
= -240A/
μ
s, V
R
= 650V
Forward Recovery Voltage
I
F
= 30A, di
F
/dt
= 240A/
μ
s, V
R
= 650V
Rate of Fall of Recovery Current
I
F
= 30A, di
F
/dt
= -240A/
μ
s, V
R
= 650V
(See Figure 10)
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
APT33GF120B2RD/LRD
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