參數(shù)資料
型號: APT30M85BNR
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 40A I(D) | TO-247AD
中文描述: 晶體管| MOSFET的| N溝道| 300V五(巴西)直| 40A條(?。﹟采用TO - 247AD
文件頁數(shù): 3/4頁
文件大?。?/td> 53K
代理商: APT30M85BNR
V
F
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 2, Forward Voltage Drop vs Forward Current
di
F
/dt, CURRENT SLEW RATE (AMPERES/μSEC)
Figure 3, Reverse Recovery Charge vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/μSEC)
Figure 4, Reverse Recovery Current vs Current Slew Rate
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5, Dynamic Parameters vs Junction Temperature
di
F
/dt, CURRENT SLEW RATE (AMPERES/μSEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/μSEC)
Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 8, Junction Capacitance vs Reverse Voltage
C
J
,
t
r
,
I
R
,
I
F
,
(
(
(
(
t
f
,
K
f
,
Q
r
,
(
(
(
V
f
,
(
0
1
2
3
4
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
0.01
0.05
0.1
0.5
1
5
10
50
100
200
APT30D120BCT
100
80
60
40
20
0
50
40
30
20
10
0
250
200
150
100
50
0
500
100
50
10
T
J
= 100°C
V
R
= 650V
2400
2000
1600
1200
800
400
0
2.0
1.6
1.2
0.8
0.4
0.0
2000
1600
1200
800
400
0
100
80
60
40
20
0
T
J
=100°C
V
R
=650V
T
J
=100°C
V
R
=650V
T
J
= 100°C
V
R
= 650V
I
F
= 30A
t
rr
I
RRM
Q
rr
T
J
= -55°C
T
J
= 100°C
T
J
= 150°C
15A
30A
60A
15A
30A
60A
60A
30A
15A
0
V
fr
t
fr
T
J
= 25°C
t
rr
Q
rr
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相關代理商/技術參數(shù)
參數(shù)描述
APT30M85BVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT30M85BVFRG 功能描述:MOSFET N-CH 300V 40A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT30M85BVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT30M85BVRG 功能描述:MOSFET N-CH 300V 40A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT30M85SVFRG 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube