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參數(shù)資料
| 型號(hào)： | APT30M85 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 53K |
| 代理商： | APT30M85 |
APT30D120BCT
1200V
30A
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 80°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Operating and StorageTemperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
T
J
,T
STG
T
L
Symbol
V
F
I
RM
C
T
L
S
Characteristic / Test Conditions
I
F
= 30A
Maximum Forward Voltage
I
F
= 60A
I
F
= 30A, T
J
= 150°C
Maximum Reverse Leakage Current
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125°C
Junction Capacitance, V
R
= 200V
Series Inductance (Lead to Lead 5mm from Base)
STATIC ELECTRICAL CHARACTERISTICS
PRODUCT BENEFITS
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
UNIT
Volts
Amps
°C
UNIT
Volts
μA
pF
nH
MIN
TYP
MAX
2.5
2.0
2.0
250
500
30
10
APT30D120BCT
1200
30
70
210
-55 to 150
300
MAXIMUM RATINGS
All Ratings Are Per Diode: T
C
= 25°C unless otherwise specified.
PRODUCT FEATURES
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular TO-247 Package
Low Forward Voltage
High Blocking Voltage
Low Leakage Current
PRODUCT APPLICATIONS
Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
0
APT Website - http://www.advancedpower.com
1
3
2
1- Anode 1
2- Common Cathode
Back of Case-Cathode
3- Anode 2
TO247
1
2
3
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| APT30M85BVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT30M85BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30M85BNFR | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 40A I(D) | TO-247AD |
| APT30M85BNR | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 40A I(D) | TO-247AD |
| APT30M85BVFR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT30M85BVFRG | 功能描述:MOSFET N-CH 300V 40A TO-247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT30M85BVR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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