參數(shù)資料
型號: APT30M50JNR
英文描述: TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 65A I(D)
中文描述: 晶體管| MOSFET功率模塊|獨立| 300V五(巴西)直|第65A條(丁)
文件頁數(shù): 2/4頁
文件大?。?/td> 53K
代理商: APT30M50JNR
MIN
TYP
MAX
70
85
70
160
255
255
7
12
12
20
660
1640
15
20
245
160
UNIT
ns
Amps
nC
Volts
A/μs
APT30D120BCT
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt
= -15A/μs, V
R
= 30V,
T
J
= 25°C
Reverse Recovery Time
T
J
= 25°C
I
F
= 30A, di
F
/dt
= -240A/μs, V
R
= 650V
T
J
= 100°C
Forward Recovery Time
T
J
= 25°C
I
F
= 30A, di
F
/dt
= 240A/μs, V
R
= 650V
T
J
= 100°C
Reverse Recovery Current
T
J
= 25°C
I
F
= 30A, di
F
/dt
= -240A/μs, V
R
= 650V
T
J
= 100°C
Recovery Charge
T
J
= 25°C
I
F
= 30A, di
F
/dt
= -240A/μs, V
R
= 650V
T
J
= 100°C
Forward Recovery Voltage
T
J
= 25°C
I
F
= 30A, di
F
/dt
= 240A/μs, V
R
= 650V
T
J
= 100°C
Rate of Fall of Recovery Current
T
J
= 25°C
I
F
= 30A, di
F
/dt
= -240A/μs, V
R
= 650V (See Figure 10)
T
J
= 100°C
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
DYNAMIC CHARACTERISTICS
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Maximum Mounting Torque (Screw Type = 6-32 or 3mm Machine)
Symbol
R
θ
JC
R
θ
JA
W
T
Torque
MIN
TYP
MAX
0.90
40
0.22
6.1
10
1.1
UNIT
°C/W
oz
gm
lbin
Nm
NOTE:
P x Z +
C
J
=
DUTY FACTOR D=t
1 2
PEAK T
P
D
t
2
t
t
1
1.0
0.5
0.1
0.05
0.01
0.005
0.001
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0
Z
θ
J
,
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