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參數(shù)資料
| 型號： | APT30GS60BRDL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 247K |
| 代理商： | APT30GS60BRDL |
0.0838
0.207
0.209
0.00245
0.00548
0.165
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Figure 20, Transient Thermal Impedance Model
I
C
, COLLECTOR CURRENT (A)
Figure 21, Operating Frequency vs Collector Current
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
F
MAX
,OPERA
TING
FREQ
UENCY
(kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
Figure 18, Maximum Forward Safe Operating Area
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
1
10
100
800
1
10
100
800
0
10
20
30
40
50
10-5
10-4
10-3
10-2
10-1
1.0
0.60
0.50
0.40
0.30
0.20
0.10
0
200
100
10
1
0.1
200
100
10
1
0.1
120
10
1
Scaling for Different Case & Junction
Temperatures:
I
C
= I
C(T
C
= 25
°C)*(TJ - TC)/125
T
J
= 150°C
T
C
= 25°C
1ms
100ms
VCE(on)
DC line
100s
I
CM
10ms
13s
T
J
= 125°C
T
C
= 75°C
1ms
100ms
VCE(on)
DC line
100s
I
CM
10ms
13s
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
T
J
= 125
°C
T
C
= 75
°C
D = 50 %
V
CE
= 400V
R
G
= 9.1
Ω
0.3
0.9
0.7
SINGLE PULSE
0.5
0.1
0.05
T
C
= 100
°C
T
C
= 75
°C
F
max
= min (f
max, f max2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - P cond
E
on2 + E off
f
max2 =
P
diss =
T
J - T C
R θJC
10-5
10-4
10-3
10-2
10-1
1.0
APT30GS60BRDL(G)
052-6353
Re
v
A
7-2008
TYPICAL PERFORMANCE CURVES
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT30GS60BRDQ2G | 功能描述:IGBT 600V 54A 250W SOT227 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT30GS60KR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT30GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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