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參數(shù)資料
| 型號： | APT30GS60BRDL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 247K |
| 代理商： | APT30GS60BRDL |
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250A
600
-
V
ΔV
BR(CES)
/
ΔT
J
Breakdown Voltage Temperature Coeff
Reference to 25°C, I
C
= 250A
-
0.60
-
V/°C
V
CE(ON)
Collector-Emitter On Voltage 4
V
GE = 15V
I
C = 30A
T
J = 25°C
-
2.8
3.15
V
T
J = 125°C
-
3.25
-
V
GE(th)
Gate-Emitter Threshold Voltage
V
GE = VCE, IC = 1mA
34
5
ΔV
GE(th)/ΔTJ
Threshold Voltage Temp Coeff
-
6.7
-
mV/°C
I
CES
Zero Gate Voltage Collector Current
V
CE = 600V,
V
GE = 0V
T
J = 25°C
--
50
A
T
J = 125°C
-
1000
I
GES
Gate-Emitter Leakage Current
V
GE = ±20V
-
±100
nA
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
g
fs
Forward Transconductance
V
CE = 50V, IC = 30A
-18-
S
C
ies
Input Capacitance
V
GE = 0V, VCE = 25V
f = 1MHz
-
1600
-
pF
C
oes
Output Capacitance
-
140
-
C
res
Reverse Transfer Capacitance
-
90
-
C
o(cr)
Reverse Transfer Capacitance
Charge Related 5
V
GE = 0V
V
CE = 0 to 400V
-
130
-
C
o(er)
Reverse Transfer Capacitance
Current Related 6
95
Q
g
Total Gate Charge
V
GE = 0 to 15V
I
C = 30A, VCE = 300V
-
145
-
nC
Q
ge
Gate-Emitter Charge
-
12
-
G
gc
Gate-Collector Charge
-
65
-
t
d(on)
Turn-On Delay Time
Inductive Switching IGBT and
Diode:
T
J = 25°C, VCC = 400V,
I
C = 30A
R
G = 9.1Ω
7, V
GG = 15V
-16-
ns
t
r
Rise Time
-
29
-
td(off)
Turn-Off Delay Time
-
360
-
t
f
Fall Time
-
27
-
E
on1
Turn-On Switching Energy 8
-
TBD
-
J
E
on2
Turn-On Switching Energy 9
-
800
-
E
off
Turn-Off Switching Energy 10
-
570
-
t
d(on)
Turn-On Delay Time
Inductive Switching IGBT and
Diode:
T
J = 125°C, VCC = 400V,
I
C = 30A
R
G = 9.1Ω
7, V
GG = 15V
-16-
ns
t
r
Rise Time
-
29
-
t
d(off)
Turn-Off Delay Time
-
390
-
t
f
Fall Time
-
22
-
E
on1
Turn-On Switching Energy 8
-
TBD
-
J
E
on2
Turn-On Switching Energy 9
-
1185
-
E
off
Turn-Off Switching Energy 10
-
695
-
Static Characteristics
TJ = 25°C unless otherwise specied
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT30GS60BRDL(G)
052-6353
Re
v
A
7-2008
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT30GS60BRDQ2G | 功能描述:IGBT 600V 54A 250W SOT227 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT30GS60KR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT30GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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