參數(shù)資料
型號(hào): APT30GP60BG
廠(chǎng)商: MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi): IGBT 晶體管
英文描述: 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝: TO-247, 3 PIN
文件頁(yè)數(shù): 5/6頁(yè)
文件大小: 210K
代理商: APT30GP60BG
050-7400
Rev
E
9-2005
300
100
50
10
010
20
30
40
50
60
10,000
5,000
1,000
500
100
50
10
5
0
140
120
100
80
60
40
20
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
F
MAX
,OPERATING
FREQUENCY
(kHz)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
Cres
Cies
Coes
TYPICAL PREFORMANCE CURVES
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5
APT30GP60B
max
max1
max 2
max1
d(on)
r
d(off )
f
diss
cond
max 2
on2
off
JC
diss
JC
Fmin(f
,f
)
0.05
f
tt
t
PP
f
EE
TT
P
R
θ
=
++
+
=
+
=
0.30
0.25
0.20
0.15
0.10
0.05
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULARPULSEDURATION(SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.0196
0.107
0.144
0.00500F
0.0132F
0.135F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
相關(guān)PDF資料
PDF描述
APT30GP60S 100 A, 600 V, N-CHANNEL IGBT
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APT30GP60LDLG 100 A, 600 V, N-CHANNEL IGBT, TO-264AA
APT30GP60B2DL 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT30GP60LDL 100 A, 600 V, N-CHANNEL IGBT, TO-264AA
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