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參數(shù)資料
| 型號： | APT30GP60BG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 210K |
| 代理商： | APT30GP60BG |
050-7400
Rev
E
9-2005
APT30GP60B_S
T
J = 125°C, VGE = 10V or 15V
VCE = 400V
RG = 5
L = 100 H
VGE= 15V
VGE= 10V
V
GE =15V,TJ=125°C
VCE = 400V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
R
G = 5, L = 100
H, VCE = 400V
R
G = 5, L = 100
H, VCE = 400V
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
0
1020
3040
5060
0
25
50
75
100
125
V
GE =10V,TJ=125°CV
GE =15V,TJ=25°C
V
GE =10V,TJ=25°C
T
J = 25°C, VGE = 10V or 15V
100
90
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
1400
1200
1000
800
600
400
200
0
1600
1200
800
400
0
T
J = 125°C, VGE = 10V or 15V
VCE = 400V
VGE = +15V
RG = 5
VCE = 400V
VGE = +15V
RG = 5
VCE = 400V
VGE = +15V
RG = 5
Eon2, 60A
Eoff, 60A
Eon2, 30A
Eoff, 30A
Eon2, 15A
Eoff, 15A
Eon2,60A
Eoff,60A
Eon2,30A
Eoff, 30A
Eon2,15A
Eoff, 15A
VGE = +15V
TJ = 125°C
T
J = 125°C,VGE =10V
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =10V
T
J = 25°C, VGE = 10V or 15V
T
J = 25°C,VGE =15V
25
20
15
10
5
0
50
40
30
20
10
0
1400
1200
1000
800
600
400
200
0
2500
2000
1500
1000
500
0
T
J = 25 or 125°C,VGE = 15V
T
J = 25 or 125°C,VGE = 10V
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| APT30GP60S | 100 A, 600 V, N-CHANNEL IGBT |
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| APT30GP60LDLG | 100 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT30GP60B2DL | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT30GP60LDL | 100 A, 600 V, N-CHANNEL IGBT, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
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| APT30GP60JD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:600V VF/Vce(ON):2.7V ID(cont):32Amps|Ultrafast IGBT Family |
| APT30GP60JDQ1 | 功能描述:IGBT 600V 67A 245W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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| APT30GP60LDLG | 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264 |
| APT30GS60BRDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
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