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參數(shù)資料
| 型號(hào)： | APT30GP60B2DL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMPLIANT, TO-247, TMAX-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | APT30GP60B2DL |
052-6355
Rev
A
7-2008
APT30GP60B2DL_LDL(G)
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 300V
I
C = 30A
T
J = 150°C, RG = 5Ω
,
V
GE =
15V, L = 100μH,V
CE = 600V
Inductive Switching (25°C)
V
CC(Peak) = 400V
V
GE = 15V
I
C = 30A
R
G = 5Ω
T
J = +25°C
Inductive Switching (125°C)
V
CC(Peak) = 400V
V
GE = 15V
I
C = 30A
R
G = 5Ω
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching SOA
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
MIN
TYP
MAX
3200
295
20
7.5
90
20
30
120
13
18
55
46
260
335
250
330
13
18
84
80
260
508
518
750
UNIT
pF
V
nC
A
ns
μJ
ns
μJ
UNIT
°C/W
gm
MIN
TYP
MAX
.27
1.0
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
θ
JC
R
θ
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi reserves the right to change, without notice, the specications and information contained herein.
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| APT30GS60BRDL | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GP60B2DLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TMAX 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GP60BD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:600V VF/Vce(ON):2.7V ID(cont):49Amps|Ultrafast IGBT Family |
| APT30GP60BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT30GP60BDQ1G | 功能描述:IGBT 600V 100A 463W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT30GP60BG | 功能描述:IGBT 600V 100A 463W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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