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參數(shù)資料
| 型號： | APT25GP90BG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 72 A, 900 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 180K |
| 代理商： | APT25GP90BG |
050-7477
Rev
D
7-2004
APT25GP90B
TYPICAL PERFORMANCE CURVES
5,000
1,000
500
100
50
10
120
100
80
60
40
20
0
C,
CAPACITANCE
( P
F)
I C
,COLLECTOR
CURRENT
(A)
VCE,COLLECTOR-TO-EMITTERVOLTAGE(VOLTS)
VCE,COLLECTORTOEMITTERVOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200
400
600
800
1000
Cies
Coes
Cres
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULARPULSEDURATION(SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
max
max1
max 2
max1
d(on)
r
d(off )
f
diss
cond
max 2
on 2
off
JC
diss
JC
Fmin(f
,f
)
0.05
f
tt
t
PP
f
EE
TT
P
R
θ
=
++
+
=
+
=
515
25
35
45
55
65
75
F
MAX
,OPERATING
FREQUENCY
(kHz)
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 600V
RG = 5
270
100
50
10
0.131
0.168
0.00852F
0.154F
RC MODEL
Case temperature(
°C)
Junction
temp (
°C)
Power
(watts)
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