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參數(shù)資料
| 型號： | APT25GP90BG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 72 A, 900 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 180K |
| 代理商： | APT25GP90BG |
050-7477
Rev
D
7-2004
APT25GP90B
TYPICAL PERFORMANCE CURVES
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE = 15V)
FIGURE 2, Output Characteristics (V
GE = 10V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
VCE = 720V
VCE = 450V
VCE = 180V
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 25A
TJ = 25°C
TJ = -55°C
TJ = 125°C
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 12.5A
IC = 25A
IC = 50A
IC = 12.5A
100
80
60
40
20
0
120
100
80
60
40
20
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
IC = 25A
0
123
4
5
6
0
123456
0
2
4
6
8
10
0
20
40
60
80
100
120
6
8
10
12
14
16
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
TC = -50°C
TC = 125°C
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
TC = 25°C
TC = 125°C
TC = -50°C
TC = 25°C
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
4
3.5
3
2.5
2
1.5
1
0.5
0
100
80
60
40
20
0
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