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參數(shù)資料
| 型號： | APT22M100JCU2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 1000 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 109K |
| 代理商： | APT22M100JCU2 |
APT22M100JCU2
APT
22M
100JCU2
–
Rev
0
September
,2009
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VDS =1000V
VGS = 0V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 16A
400
480
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6800
Coss
Output Capacitance
700
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
92
pF
Qg
Total gate Charge
260
Qgs
Gate – Source Charge
46
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 16A
125
nC
Td(on)
Turn-on Delay Time
39
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
130
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 16A
RG = 2.2Ω
33
ns
SiC chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
32
200
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 175°C
56
1000
A
IF
DC Forward Current
Tc = 100°C
10
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 10A
Tj = 175°C
2.3
3
V
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/s
80
nC
f = 1MHz, VR = 200V
96
C
Total Capacitance
f = 1MHz, VR = 400V
69
pF
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Mosfet
0.27
RthJC
Junction to Case Thermal Resistance
SiC Diode
1.65
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG
Storage Temperature Range
-40
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| APT24F50B | 功能描述:MOSFET N-CH 500V 24A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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