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參數(shù)資料
| 型號： | APT20M26WVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 62K |
| 代理商： | APT20M26WVR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
APT20M26WVR
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
300
100
50
10
5
1
20
16
12
8
4
0
0
OPERATION HERE
LIMITED BY R
DS
(ON)
TJ =+150
°
C
TJ =+25
°
C
Crss
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
1
5
10
50
100
200
.01
.1
1
10
50
0
100
200
300
400
500
0.3
0.7
1.1
1.5
1.9
2.3
Coss
Ciss
30,000
10,000
5,000
1,000
500
100
400
100
50
10
5
1
VDS=100V
VDS=40V
VDS=160V
I
D
= I
D
[Cont.]
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
TO-267 Package Outline
5.00 (.197) BSC
1.80 (.071)
1.25 (.049)
20.45 (.805)
20.20 (.795)
4.19 (.165)
3.95 (.156)
Drain
Source
Gate
1.65 (.065)
1.40 (.055)
Dia. Typ.
3 Leads
20.32 (.800)
20.07 (.790)
19.05 (.750)
12.70 (.500)
24.15 (.951)
23.60 (.929)
10.23 (.403)
10.10 (.398)
Dimensions in Millimeters and (Inches)
4.20 (.165) BSC
7.40 (.291)
6.60 (.260)
16.90 (.665)
16.40 (.646)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| APT20M30JNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 90A I(D) |
| APT20M34BFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT20M34BFLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
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