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參數(shù)資料
| 型號(hào)： | APT20M26WVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | APT20M26WVR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
(
R
D
(
I
D
,
(
V
0
20
40
60
80
100
0
1
2
3
4
5
0
2
4
6
8
0
50
100
150
200
250
300
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
75
100
125 150
-50
-25
0
25
50
75
100
125
150
APT20M26WVR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
200
160
120
80
40
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
200
160
120
80
40
0
200
160
120
80
40
0
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
0
VD250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=7V, 8V, 10V & 15V
6V
VGS=15V
VGS=10V
VGS=20V
TJ = +25
°
C
TJ = +125
°
C
TJ = -55
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
8V
7V6.5V
10V
5.5V
4.5V
5V
4V
6V
6.5V
5.5V
4.5V
5V
4V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
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