參數(shù)資料
型號: APT20M11JVR
廠商: Advanced Power Technology Ltd.
英文描述: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述: 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。
文件頁數(shù): 4/4頁
文件大?。?/td> 74K
代理商: APT20M11JVR
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
APT20M11JVFR
0
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
ISOTOP
is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
1
5
10
50
100
200
.01
.1
1
10
50
0
200
400
600
800
1000 1200 1400
0
0.4
0.8
1.2
1.6
2.0
50,000
10,000
5,000
1,000
500
400
100
50
10
5
1
VDS=40V
VDS=160V
10
μ
S
10mS
100mS
DC
1mS
TJ =+150
°
C
TJ =+25
°
C
Crss
Coss
Ciss
1,000
500
100
50
10
5
1
20
16
12
8
4
0
100
μ
S
VDS=100V
V
Isolation
, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum
I
D
= 0.5 I
D
[Cont.]
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