參數(shù)資料
型號(hào)： APT20M11JVR
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。
文件頁數(shù)： 3/4頁
文件大?。?/td> 74K
代理商： APT20M11JVR
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
APT20M11JVFR
VGS=7V, 8V, 9V, 10V & 15V
0
0
20
40
60
80
100
0
1
2
3
4
5
0
2
4
6
8
0
100
200
300
400
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
75
100
125 150
-50
-25
0
25
50
75
100
125
150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
360
300
240
180
120
60
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
360
300
240
180
120
60
0
360
300
240
180
120
60
0
200
150
100
50
0
2.5
2.0
1.5
1.0
0.5
0.0
VD250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
6V
7V
5.5V
4.5V
5V
8V
6V
5.5V
4.5V
5V
6.5V
VGS=15V
10V
9V
6.5V
TJ = +25
°
C
TJ = +125
°
C
TJ = -55
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
4V
4V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
相關(guān)PDF資料
PDF描述
APT20M13PVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M16LFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT20M16LLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
APT20M16B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT20M16B2LL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT20M120JCU2 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET DIODE 1200V SOT227 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APT20M120JCU3 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET DIODE 1200V SOT227 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APT20M13PVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M16B2FLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT20M16B2FLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET
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