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參數(shù)資料
| 型號： | APT20GF120SRD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 32 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 108K |
| 代理商： | APT20GF120SRD |
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS (IGBT)
APT20GF120BRD/SRD
UNIT
°C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.63
0.90
40
0.22
6.1
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
RΘJC
RΘJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.8VCES
IC = IC2
RG = 10
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +25°C
VCE = 20V, IC = 15A
MIN
TYP
MAX
1050
1210
100
150
63
110
95
140
13
20
62
90
15
30
67
130
92
140
93
190
17
34
30
60
105
160
71
140
1.3
3
1.5
3
2.7
5
17
30
35
70
93
140
70
140
2.4
5
12
UNIT
pF
nC
ns
mJ
ns
mJ
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 2
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
See MIL-STD-750 Method 3471
3
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6252
Rev
C
4-2003
相關(guān)PDF資料 |
PDF描述 |
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| APT20GF120SRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120BRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GF120SRDQ1 | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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| APT20GN60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GN60BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT20GN60BDQ1G | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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