參數(shù)資料
型號: APT15GP60K
元件分類: IGBT 晶體管
英文描述: 56 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 5/6頁
文件大小: 201K
代理商: APT15GP60K
050-7418
Rev
A
10-2005
TYPICAL PERFORMANCE CURVES
APT15GP60K
4,000
1,000
500
100
50
10
70
60
50
40
30
20
10
0
C,
CAPACITANCE
( P
F)
I C
,COLLECTOR
CURRENT
(A)
VCE,COLLECTOR-TO-EMITTERVOLTAGE(VOLTS)
VCE,COLLECTORTOEMITTERVOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
Cies
Coes
Cres
0.60
0.50
0.40
0.30
0.20
0.10
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULARPULSEDURATION(SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
max
max1
max 2
max1
d(on)
r
d(off )
f
diss
cond
max 2
on2
off
JC
diss
JC
Fmin(f
, f
)
0.05
f
tt
t
PP
f
EE
TT
P
R
θ
=
++
+
=
+
=
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
5
10
15 2025
303540
45
50
292
100
50
10
F
MAX
,OPERATING
FREQUENCY
(kHz)
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5
0.216
0.284
0.00600
0.164
Power
(Watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature
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