參數(shù)資料
型號(hào)： APT12080LVFRG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 129K
代理商： APT12080LVFRG
050-5840
Rev
A
2
-200
6
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
Avalanche Energy Rated
Lower Leakage
Popular T-MAX or TO-264
Package
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID= 8A)
Zero Gate Voltage Drain Current (V
DS = 1200, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1200
0.800
250
1000
±100
24
APT12080B2VFR_LVFR
1200
16
64
±30
±40
520
4.16
-55 to 150
300
16
50
2500
FREDFET
POWER MOS V
FREDFET
G
D
S
APT12080B2VFR
APT12080LVFR
1200V 16A 0.800
T-MAX
TO-264
相關(guān)PDF資料
PDF描述
APT12080B2VFR 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
APT12080B2VFR 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
APT12080LVFR 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT12080LVFR 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT12080B2VFRG 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT12080LVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT12080LVRG 制造商:Microsemi Corporation 功能描述:
APT1211 功能描述:三極與 SCR 輸出光電耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 輸出設(shè)備:PhotoTriac 每芯片的通道數(shù)量: 絕緣電壓:3750 Vrms 正向電流:10 mA 正向電壓:1.2 V 最大觸發(fā)電流:10 mA 關(guān)斷狀態(tài)下輸出電壓-VDRM:600 V 最大連續(xù)輸出電流: 零交叉電路: 封裝:Reel
APT1211A 功能描述:三極與 SCR 輸出光電耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 輸出設(shè)備:PhotoTriac 每芯片的通道數(shù)量: 絕緣電壓:3750 Vrms 正向電流:10 mA 正向電壓:1.2 V 最大觸發(fā)電流:10 mA 關(guān)斷狀態(tài)下輸出電壓-VDRM:600 V 最大連續(xù)輸出電流: 零交叉電路: 封裝:Reel
APT1211AX 功能描述:三極與 SCR 輸出光電耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 輸出設(shè)備:PhotoTriac 每芯片的通道數(shù)量: 絕緣電壓:3750 Vrms 正向電流:10 mA 正向電壓:1.2 V 最大觸發(fā)電流:10 mA 關(guān)斷狀態(tài)下輸出電壓-VDRM:600 V 最大連續(xù)輸出電流: 零交叉電路: 封裝:Reel
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