- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36706 > APT12080LVFR 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA PDF資料下載
參數(shù)資料
| 型號： | APT12080LVFR |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 129K |
| 代理商： | APT12080LVFR |
050-5840
Rev
A
2
-200
6
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
Avalanche Energy Rated
Lower Leakage
Popular T-MAX or TO-264
Package
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID= 8A)
Zero Gate Voltage Drain Current (V
DS = 1200, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1200
0.800
250
1000
±100
24
APT12080B2VFR_LVFR
1200
16
64
±30
±40
520
4.16
-55 to 150
300
16
50
2500
FREDFET
POWER MOS V
FREDFET
G
D
S
APT12080B2VFR
APT12080LVFR
1200V 16A 0.800
T-MAX
TO-264
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT12080B2VFRG | 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12GT60KRG | 25 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT12GT60KR | 25 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT13GP120BDF1 | 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT13GP120BDQ1G | 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT12080LVFRG | 功能描述:MOSFET N-CH 1200V 16A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT12080LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT12080LVRG | 制造商:Microsemi Corporation 功能描述: |
| APT1211 | 功能描述:三極與 SCR 輸出光電耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 輸出設(shè)備:PhotoTriac 每芯片的通道數(shù)量: 絕緣電壓:3750 Vrms 正向電流:10 mA 正向電壓:1.2 V 最大觸發(fā)電流:10 mA 關(guān)斷狀態(tài)下輸出電壓-VDRM:600 V 最大連續(xù)輸出電流: 零交叉電路: 封裝:Reel |
| APT1211A | 功能描述:三極與 SCR 輸出光電耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 輸出設(shè)備:PhotoTriac 每芯片的通道數(shù)量: 絕緣電壓:3750 Vrms 正向電流:10 mA 正向電壓:1.2 V 最大觸發(fā)電流:10 mA 關(guān)斷狀態(tài)下輸出電壓-VDRM:600 V 最大連續(xù)輸出電流: 零交叉電路: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。