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參數(shù)資料
| 型號(hào)： | APT12080LVFR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | APT12080LVFR |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT12080B2VFR_LVFR
050-5840
Rev
A
2-200
6
1
5
10
50 100
500 1200
.01
.1
1
10
50
0
100
200
300
400
500
600
0
0.4
0.8
1.2
1.6
2.0
TC =+25°C
TJ =+150°C
SINGLE PULSE
100
50
10
5
1
.5
.1
20
16
12
8
4
0
30,000
10,000
5,000
1,000
500
100
50
10
5
1
.5
.1
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
VDS=600V
VDS=240V
VDS=120V
Crss
Coss
Ciss
I
D = ID [Cont.]
10S
1mS
10mS
100mS
DC
100S
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT12080LVFRG | 功能描述:MOSFET N-CH 1200V 16A TO-264 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT12080LVR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT12080LVRG | 制造商:Microsemi Corporation 功能描述: |
| APT1211 | 功能描述:三極與 SCR 輸出光電耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 輸出設(shè)備:PhotoTriac 每芯片的通道數(shù)量: 絕緣電壓:3750 Vrms 正向電流:10 mA 正向電壓:1.2 V 最大觸發(fā)電流:10 mA 關(guān)斷狀態(tài)下輸出電壓-VDRM:600 V 最大連續(xù)輸出電流: 零交叉電路: 封裝:Reel |
| APT1211A | 功能描述:三極與 SCR 輸出光電耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 輸出設(shè)備:PhotoTriac 每芯片的通道數(shù)量: 絕緣電壓:3750 Vrms 正向電流:10 mA 正向電壓:1.2 V 最大觸發(fā)電流:10 mA 關(guān)斷狀態(tài)下輸出電壓-VDRM:600 V 最大連續(xù)輸出電流: 零交叉電路: 封裝:Reel |
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