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參數(shù)資料
| 型號(hào)： | APT12080LVFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 129K |
| 代理商： | APT12080LVFR |
DYNAMIC CHARACTERISTICS
APT12080B2VFR_LVFR
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
050-5840
Rev
A
2-200
6
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 19.53mH, RG = 25, Peak IL = 16A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 IS ≤ ID [Cont.], di/dt = 100A/s, Tj ≤ 150°C, RG = 2.0 VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6
UNIT
pF
nC
ns
MIN
TYP
MAX
16
64
1.3
18
Tj = 25°C
350
Tj = 125°C
700
Tj = 25°C
2
Tj = 125°C
6
Tj = 25°C
12
Tj = 125°C
22
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
6500
7800
530
740
250
375
325
485
29
45
145
215
16
32
12
24
59
90
12
24
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT12080LVFRG | 功能描述:MOSFET N-CH 1200V 16A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT12080LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT12080LVRG | 制造商:Microsemi Corporation 功能描述: |
| APT1211 | 功能描述:三極與 SCR 輸出光電耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 輸出設(shè)備:PhotoTriac 每芯片的通道數(shù)量: 絕緣電壓:3750 Vrms 正向電流:10 mA 正向電壓:1.2 V 最大觸發(fā)電流:10 mA 關(guān)斷狀態(tài)下輸出電壓-VDRM:600 V 最大連續(xù)輸出電流: 零交叉電路: 封裝:Reel |
| APT1211A | 功能描述:三極與 SCR 輸出光電耦合器 AC TY 600V 100mA 50V Phototriac Coupler RoHS:否 制造商:Vishay Semiconductors 輸出設(shè)備:PhotoTriac 每芯片的通道數(shù)量: 絕緣電壓:3750 Vrms 正向電流:10 mA 正向電壓:1.2 V 最大觸發(fā)電流:10 mA 關(guān)斷狀態(tài)下輸出電壓-VDRM:600 V 最大連續(xù)輸出電流: 零交叉電路: 封裝:Reel |
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