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參數(shù)資料
| 型號(hào)： | APT12067B2FLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | T-MAX, 3 PIN |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 102K |
| 代理商： | APT12067B2FLLG |
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
050-7087
Rev
B
2-2004
APT12067B2FLL - LFLL
20,000
10,000
5,000
1,000
500
100
10
200
100
10
1
10
100
1200
0
10
20
30
40
50
0
20 40
60
80 100 120 140 160 180 200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
72
10
5
1
16
12
8
4
0
Crss
Ciss
Coss
VDS=600V
VDS=240V
VDS=960V
I
D
= 18A
TJ =+150°C
TJ =+25°C
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
1mS
100S
10mS
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
0
V
DD
= 800V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 800V
R
G
= 5
T
J
= 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
E
on
and
E
off
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
V
DD
= 800V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery
V
DD
= 800V
I
D
= 18A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery
160
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
10
20
30
0
5
1015202530
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35 40
45
50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT12067B2FLL | 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12080LVFRG | 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12080B2VFR | 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12080B2VFR | 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12080LVFR | 16 A, 1200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT12067B2LL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT12067B2LLG | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1200V 18A T-MAX |
| APT12067JFLL | 功能描述:MOSFET N-CH 1200V 17A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT12067JLL | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1200V 17A SOT227 |
| APT12067LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
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