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參數(shù)資料
| 型號： | APT11GP60BDQB |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 212K |
| 代理商： | APT11GP60BDQB |
050-7447
Rev
A
3-2005
APT11GP60BDQB
VCE = 400V
RG= 5
L = 100 H
V
GE =15V,TJ=125°C
VGE= 15V
V
GE =15V,TJ=25°C
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
T
J = 25 or 125°C,VGE = 15V
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
TJ=125°C,VGE=15V
TJ= 25°C, VGE=15V
VCE = 400V
TJ = 25°C, TJ =125°C
RG= 5
L = 100 H
5
10
15
20
25
5
10
15
20
25
5
10
15
20
25
30
35
5
10
15
20
25
5
10
15
20
25
5
10
15
20
25
0
10
20
30
40
50
0
25
50
75
100
125
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
500
400
300
200
100
0
600
500
400
300
200
100
0
R
G = 5, L = 100
H, VCE = 400V
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
600
500
400
300
200
100
0
600
500
400
300
200
100
0
VCE = 400V
L = 100 H
RG = 5
VCE = 400V
L = 100 H
RG = 5
VCE = 400V
VGE = +15V
T
J = 125°C
Eon25.5A
Eoff11A
Eon211A
Eon222A
Eoff22A
Eoff5.5A
VCE = 400V
VGE = +15V
RG = 5
Eon25.5A
Eoff11A
Eon211A
Eon222A
Eoff22A
Eoff5.5A
R
G = 5, L = 100
H, VCE = 400V
T
J = 125°C, VGE = 5V
T
J = 25°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C, VGE = 15V
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| APT11GP60BDQBG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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