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參數(shù)資料
| 型號(hào)： | APT10090SLL |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 95K |
| 代理商： | APT10090SLL |
050-7002
Rev
C
7-2003
APT10090BLL - SLL
Typical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAK Package Outline
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
T
J
= 125 C
90%
t
d(off)
10%
0
90%
t
f
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
10 %
t
d(on)
90%
5 %
10 %
t
r
5 %
Gate Voltage
T
J
= 125 C
Switching Energy
Drain Current
Drain Voltage
IC
D.U.T.
APT15DF120B
VCE
Figure 20, Inductive Switching Test Circuit
G
VDD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10090SLLG | 功能描述:MOSFET N-CH 1000V 12A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT100DL60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Ultrasoft Recovery Rectifi er Diode |
| APT100DL60BG | 制造商:Microsemi Corporation 功能描述:FAST RECOVERY EPITAXIAL DIODE - DL - Rail/Tube 制造商:Microsemi Corporation 功能描述:DIODE ULT SOFT 600V 100A TO-247 |
| APT100DL60HJ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP Fast Diode Full Bridge Power Module |
| APT100DL60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Ultrasoft Recovery Rectifi er Diode |
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