參數(shù)資料
型號(hào): APT1003RSFLL
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D2PAK-3
文件頁數(shù): 4/5頁
文件大?。?/td> 102K
代理商: APT1003RSFLL
050-7110
Rev
A
1-2004
APT1003RBFLL_SFLL
TJ=+150°C
TJ =+25°C
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
5
10
15
20
25
30
35 40
45 50
0.3
0.5
0.7
0.9
1.1
1.3
1.5
16
10
5
1
.5
.1
16
12
8
4
0
TC=+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100S
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
0
12345678
0
1
23
45678
0
1234567
8
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 667V
I
D
= 4A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
VDS=500V
VDS=200V
VDS=800V
I
D
= 4A
td(on)
td(off)
Eon
Eoff
25
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON includes
diode reverse recovery.
4,000
1,000
100
10
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
70
60
50
40
30
20
10
0
140
120
100
80
60
40
20
0
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