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| 型號(hào)： | APT1003RSFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | APT1003RSFLL |
DYNAMIC CHARACTERISTICS
050-7110
Rev
A
1-2004
APT1003RBFLL_SFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -4A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -4A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -4A, di/dt = 100A/s)
Peak Recovery Current
(IS = -4A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
4
16
1.3
18
Tj = 25°C
250
Tj = 125°C
515
Tj = 25°C
0.50
Tj = 125°C
1.1
Tj = 25°C
8.3
Tj = 125°C
11.5
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.90
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 53.13mH, RG = 25, Peak IL = 4A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
4A di
/dt ≤ 700A/s V
R ≤
V
DSS
V
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
MIN
TYP
MAX
694
135
25
34
5
22
8
4
25
10
13
42
40
48
UNIT
pF
nC
ns
J
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 500V
I
D
= 4A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 500V
I
D
= 4A @ 25°C
R
G
= 1.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 667V, V
GS
= 15V
I
D
= 4A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 667V, V
GS
= 15V
I
D
= 4A, R
G
= 5
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.80
0.60
0.40
0.20
0
0.5
0.1
0.3
0.7
0.9
0.05
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|---|---|
| APT1003RSFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
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| APT1003RSLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT1003RSLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT1004 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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