- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36700 > APT1001RSVRG (MICROSEMI POWER PRODUCTS GROUP) 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT1001RSVRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 71K |
| 代理商： | APT1001RSVRG |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50 100
500
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
APT1001RSVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
50
10
5
1
.5
.1
20
16
12
8
4
0
11,000
5,000
1,000
500
100
50
10
5
1
.5
.1
050-5578
Rev
B
OPERATION HERE
LIMITED BY RDS (ON)
10
S
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=200V
VDS=100V
VDS=500V
1mS
10mS
100mS
DC
100
S
I
D
= I
D
[Cont.]
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
15.95 (.628)
16.05 (.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
4/18/95
D
3
PAK Package Outline
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10021JLL | 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10021JLL | 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10025JFLC | 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10025JVFR | 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10025JVR | 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10021DFN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 1KV V(BR)DSS | 40A I(D) |
| APT10021DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT10021JFLL | 功能描述:MOSFET N-CH 1000V 37A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10021JFLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10021JLL | 功能描述:MOSFET N-CH 1000V 37A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。