- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36700 > APT1001RSVRG (MICROSEMI POWER PRODUCTS GROUP) 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT1001RSVRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 71K |
| 代理商： | APT1001RSVRG |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
100
200
300
400
500
0
4
8
12
16
20
0
2468
0
5
10
15
20
25
30
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT1001RSVR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
20
16
12
8
4
0
1.5
1.4
1.2
1.0
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20
16
12
8
4
0
40
30
20
10
0
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
050-5578
Rev
B
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
TJ = +125°C
4.5V
4V
VGS=6V, 10V & 15V
5V
4.5V
VGS=15V
VGS=6V & 10V
3.5V
4V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10021JLL | 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10021JLL | 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10025JFLC | 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10025JVFR | 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10025JVR | 34 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10021DFN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 1KV V(BR)DSS | 40A I(D) |
| APT10021DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT10021JFLL | 功能描述:MOSFET N-CH 1000V 37A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10021JFLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10021JLL | 功能描述:MOSFET N-CH 1000V 37A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。