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參數(shù)資料
| 型號： | Applications2SK3132 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 718K |
| 代理商： | APPLICATIONS2SK3132 |
2SK3132
2006-11-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSV)
2SK3132
Chopper Regulator DC
DC Converter and Motor Drive
Applications
z
Low drain
source ON resistance
z
High forward transfer admittance
z
Low leakage current
: I
DSS
= 100
μ
A (max) (V
DS
= 500 V)
z
Enhancement mode
: V
th
= 2.4~3.4 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
: R
DS (ON)
= 0.07
(typ.)
: |Y
fs
| = 33 S (typ.)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
500
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
500
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
50
A
DCDrain current
Pulse (Note 1)
I
DP
200
A
Drain power dissipation (Tc
=
25°C)
P
D
250
W
Single pulse avalanche energy
(Note 2)
E
AS
525
mJ
Avalanche current
I
AR
50
A
Repetitive avalanche energy (Note 3)
E
AR
25
mJ
Channel temperature
T
ch
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
0.5
°C / W
Thermal resistance, channel to
ambient
R
th
(ch
a)
35.7
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD =
90 V, T
ch
= 25°C (initial), L = 357
μ
H, R
G
= 25
, I
AR
= 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
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