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參數(shù)資料
| 型號(hào)： | APM9435KC-TR |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 123K |
| 代理商： | APM9435KC-TR |
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
APM9435
www.anpec.com.tw
2
Symbol
P
D
Parameter
Rating
2.5
Unit
T
A
= 25
°
C
T
A
= 100
°
C
Maximum Power Dissipation
1.0
W
T
J
T
STG
Maximum Operating and Storage Junction Temperature
-55 to 150
°
C
R
θ
JA
Thermal Resistance - Junction to Ambient
50
°C/W
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
APM9435
Min.
Typ
a
.
Max.
Symbol
Parameter
Test Condition
Unit
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250
μ
A
V
DS
=24V, V
GS
=0V
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=±25V, V
DS
=0V
V
GS
=-10V, I
D
=-4.6A
-30
V
Zero Gate Voltage Drain Current
-1
uA
Gate Threshold Voltage
-1
-3
V
Gate Leakage Current
±100
nA
52
60
R
DS(ON)
Drain-Source On-state Resistance
b
V
GS
=-4.5V, I
D
=-2A
I
SD
=-3A, V
GS
=0V
80
95
m
V
SD
Diode Forward Voltage
b
-0.6
-1.3
V
Dynamic
a
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
22.5
29
Gate-Source Charge
4.5
Gate-Drain Charge
V
DS
=-15V, V
GS
=-10V,
I
D
=-4.6A
2
nC
Turn-on Delay Time
8
17
Turn-on Rise Time
8
18
Turn-off Delay Time
35
60
Turn-off Fall Time
V
DD
=-25V, R
L
=12.5
,
I
D
=-2A , V
GEN
=-10V,
R
G
=6
,
11
28
ns
Input Capacitance
845
Output Capacitance
120
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-25V
Frequency = 1.0MHZ
80
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2%
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