參數(shù)資料
型號(hào): APM4550KC-TRL
廠(chǎng)商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N- and P-Channel)
中文描述: 雙增強(qiáng)型MOS管(N溝道和P溝道)
文件頁(yè)數(shù): 2/13頁(yè)
文件大小: 245K
代理商: APM4550KC-TRL
Copyright
ANPEC Electronics Corp.
Rev. A.1 - May, 2007
www.anpec.com.tw
2
APM4550K
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
N Channel
P Channel
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
30
-30
Gate-Source Voltage
±20
±20
-5
-20
V
Continuous Drain Current
7
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
V
GS
=±10V
30
A
2.5
-2
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°C
T
A
=25°C
T
A
=100°C
2
P
D
*
Power Dissipation
0.8
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
Note: *Surface Mounted on 1in
2
pad area, t
10sec.
62.5
°C/W
APM4550K
Symbol
Parameter
Test Condition
Min.
Typ. Max.
Unit
Static Characteristics
V
GS
=0V, I
DS
=250
μ
A
V
GS
=0V, I
DS
=-250
μ
A
N-Ch
30
BV
DSS
Drain-Source Breakdown
Voltage
P-Ch
-30
V
V
DS
=24V, V
GS
=0V
1
T
J
=85
°
C
N-Ch
30
V
DS
=-24V, V
GS
=0V
-1
I
DSS
Zero Gate Voltage Drain
Current
T
J
=85
°
C
P-Ch
-30
μ
A
V
DS
=V
GS
, I
DS
=250
μ
A
V
DS
=V
GS
, I
DS
=-250
μ
A
N-Ch
1
1.5
2
V
GS(th)
Gate Threshold Voltage
P-Ch
-1
-1.5
-2
V
N-Ch
±100
I
GSS
Gate Leakage Current
V
GS
=±20V, V
DS
=0V
P-Ch
±100
nA
V
GS
=10V, I
DS
=7A
V
GS
=-10V, I
DS
=-5A
V
GS
=4.5V, I
DS
=5A
V
GS
=-4.5V, I
DS
=-4A
N-Ch
20
27.5
P-Ch
40
50
N-Ch
30
40
R
DS(ON)
a
Drain-Source On-State
Resistance
P-Ch
62
80
m
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