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參數(shù)資料
| 型號(hào)： | APM4532 |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | Dual Enhancement Mode MOSFET (N-and P-Channel) |
| 中文描述： | 雙增強(qiáng)型MOS管（N溝道和P溝道） |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大小： | 205K |
| 代理商： | APM4532 |
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Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
2
APM4532
APM4532
Min. Typ. Max.
Symbol
Parameter
Test Condition
Unit
Static
N-Ch
30
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
μ
A
P-Ch
-30
V
V
DS
=24V , V
GS
=0V
V
DS
=-24V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250
μ
A
V
DS
=V
GS
, I
DS
=-250
μ
A
N-Ch
1
I
DSS
Zero Gate Voltage Drain
Current
P-Ch
-1
μ
A
N-Ch
1
1.5
2
V
GS(th)
Gate Threshold Voltage
P-Ch
-1
-1.5
-2
V
N-Ch
±100
I
GSS
Gate Leakage Current
V
GS
=
±
25V , V
DS
=0V
P-Ch
±100
45
nA
V
GS
=10V , I
DS
=5A
V
GS
=4.5V , I
DS
=4A
V
GS
=-10V , I
DS
=-3.5A
V
GS
=-4.5V , I
DS
=-2.5A
35
N-Ch
60
70
85
95
R
DS(ON)
a
Drain-Source On-state
Resistance
P-Ch
135
150
m
I
SD
=1.7A , V
GS
=0V
N-Ch
0.7
1.3
V
SD
a
Diode Forward Voltage
I
SD
=-1.7A , V
GS
=0V
P-Ch
-0.7
-1.3
V
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
N-Channel
P-Channel
Unit
V
DSS
V
GSS
I
D
I
DM
Drain-Source Voltage
30
-30
Gate-Source Voltage
±25
±25
V
*
Maximum Drain Current – Continuous
5
-3.5
Maximum Drain Current – Pulsed
20
-20
A
T
A
=25
°
C
2
2
P
D
Maximum Power Dissipation
T
A
=100
°
C
0.8
0.8
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
Storage Temperature Range
-55 to 150
°
C
°
C/W
R
θ
jA
Thermal Resistance – Junction to Ambient
62.5
* Surface Mounted on FR4 Board, t
≤
10 sec.
Notes
a
: Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2
%
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| APM4532K | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:Dual Enhancement Mode MOSFET (N-and P-Channel) |
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| APM4532KC-TUL | 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:Dual Enhancement Mode MOSFET (N-and P-Channel) |
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