參數(shù)資料
型號(hào): APM4500K
廠商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N-and P-Channel)
中文描述: 雙增強(qiáng)型MOS管(N溝道和P溝道)
文件頁數(shù): 3/13頁
文件大?。?/td> 675K
代理商: APM4500K
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
www.anpec.com.tw
3
APM4500
Notes
b
: Guaranteed by design, not subject to production testing
Electrical Characteristics (Cont.)
(T
A
= 25
°
C unless otherwise noted)
APM4500
Min.
Typ.
Symbol
Parameter
Test Condition
Max.
Unit
Dynamic
b
N-Ch
10
13
Q
g
Total Gate Charge
P-Ch
9
12
N-Ch
3
Q
gs
Gate-Source Charge
P-Ch
3
N-Ch
2.5
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=10V , I
DS
= 8A
V
GS
=4.5V
P-Channel
V
DS
=-10V , I
DS
=-3A
V
GS
=-4.5V
P-Ch
1
nC
N-Ch
16
32
t
d(ON)
Turn-on Delay Time
P-Ch
13
21.5
N-Ch
40
75
T
r
Turn-on Rise Time
P-Ch
36
56
N-Ch
42
78
t
d(OFF)
Turn-off Delay Time
P-Ch
45
69.5
N-Ch
20
35
T
f
Turn-off Fall Time
N-Channel
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=0.2
P-Channel
V
DD
=-10V , I
DS
=-1A ,
V
GEN
=-4.5V , R
G
=6
P-Ch
37
57.5
ns
N-Ch
675
C
iss
Input Capacitance
P-Ch
510
N-Ch
178
C
oss
Output Capacitance
P-Ch
270
N-Ch
105
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
P-Ch
120
pF
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